Vygranenko, YuriFathi, E.Sazonov, A.Vieira, ManuelaNathan, Arokia2012-03-142012-03-142010-11VYGRANENKO, Y., [et al] – Nanocrystalline p-layer for a-Si:H p-i-n solar cells and photodiodes. Solar Energy Materials and Solar Cells. ISSN 0927-0248. Vol. 94, N.º 11 (2010), pp. 1860-1863.0927-0248http://hdl.handle.net/10400.21/1299We report on structural, electronic, and optical properties of boron-doped, hydrogenated nanocrystalline silicon (nc-Si:H) thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) at a substrate temperature of 150 degrees C. Film properties were studied as a function of trimethylboron-to-silane ratio and film thickness. The absorption loss of 25% at a wavelength of 400 nm was measured for the 20 nm thick films on glass and glass/ZnO:Al substrates. By employing the p(+) nc-Si:H as a window layer, complete p-i-n structures were fabricated and characterized. Low leakage current and enhanced sensitivity in the UV/blue range were achieved by incorporating an a-SiC:H buffer between the p- and i-layers.engNanocrystalline siliconConductivityPECVDSolar cellPhotodiodejournal article10.1016/j.solmat.2010.06.044