Utilize este identificador para referenciar este registo: http://hdl.handle.net/10400.21/5090
Título: Optical nonlinearity in Tandem SI-C photodetectors
Autor: Louro, Paula
Vieira, Maria Manuela Almeida Carvalho
Vieira, Manuel Augusto
Palavras-chave: Si-C
Optical Nonlinearity
Data: 2012
Editora: Wiley-VCH Verlag Gmbh
Citação: LOURO, Paula; Vieira, Manuela; VIEIRA, Manuel A. – Optical nonlinearity in Tandem SI-C photodetectors. In Physica Status Solidi C-Current Topics in Solid State Physics. Wiley-VCH Verlag Gmbh, 2012. ISSN: 1862-6351. Vol. 9, nr. 10-11, pp. 2054-2057
Resumo: The behavior of tandem pin heterojunctions based on a-SiC: H alloys is investigated under different optical and electrical bias conditions. The devices are optimized to act as optically selective wavelength filters. Depending on the device configuration (optical gaps, thickness, sequence of cells in the stack structure) and on the applied voltage (positive or negative) and optical bias (wavelength, intensity, frequency) it is possible to combine the wavelength discrimination function with the self amplification of the signal. This wavelength nonlinearity allows the amplification or the rejection of a weak signal-impulse. The device works as an active tunable optical filter for wavelength selection and can be used as an add/drop multiplexer (ADM) which enables data to enter and leave an optical network bit stream without having to demultiplex the stream. Results show that, even under weak transient input signals, the background wavelength controls the output signal. This nonlinearity, due to the transient asymmetrical light penetration of the input channels across the device together with the modification on the electrical field profile due to the optical bias, allows tuning an input channel without demultiplexing the stream. This high optical nonlinearity makes the optimized devices attractive for the amplification of all optical signals. Transfer characteristics effects due to changes in steady state light, control d.c. voltage and applied light pulses are presented. Based on the experimental results and device configuration an optoelectronic model is developed. The transfer characteristics effects due to changes in steady state light, dc control voltage or applied light pulses are simulated and compared with the experimental data. A good agreement was achieved.
URI: http://hdl.handle.net/10400.21/5090
DOI: 10.1002/pssc.201200210
ISSN: 1862-6351
Aparece nas colecções:ISEL - Eng. Elect. Tel. Comp. - Comunicações

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