Utilize este identificador para referenciar este registo: http://hdl.handle.net/10400.21/700
Título: Phototransistor with nanocrystalline Si/amorphous Si bilayer channel
Autor: Vygranenko, Yuri
Nathan, Arokia
Vieira, Maria Manuela Almeida Carvalho
Sazonov, Andrei
Palavras-chave: Amorphous semiconductors
Elemental semiconductors
Field effect transistors
Hydrogen
Multilayers
Nanostructured materials
Photoconductivity
Phototransistors
Plasma CVD
Silicon
Thin film transistors
Data: 26-Abr-2010
Editora: Amer Inst Physics
Citação: Vygranenko Y, Nathan A, Vieira M, Sazonov A.Phototransistor with nanocrystalline Si/amorphous Si bilayer channel.Applied Physics Letters. 2010; 96 (17): Art. No. 173507.
Relatório da Série N.º: 17;173507
Resumo: We report a field-effect phototransistor with a channel comprising a thin nanocrystalline silicon transport layer and a thicker hydrogenated amorphous silicon absorption layer. The semiconductor and dielectric layers were deposited by radio-frequency plasma enhanced chemical vapor deposition. The phototransistor with channel length of 24 microns and photosensitive area of 1.4 mm(2) shows an off-current of about 1 pA, and high photoconductive gain in the subthreshold region. Measurements of the quantum efficiency at different incident light intensities and biasing conditions, along with spectral-response characteristics, and threshold voltage stability characterization demonstrate the feasibility of the phototransistor for low light level detection.
Peer review: yes
URI: http://hdl.handle.net/10400.21/700
ISSN: 0003-6951
Aparece nas colecções:ISEL - Eng. Elect. Tel. Comp. - Artigos

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