Utilize este identificador para referenciar este registo: http://hdl.handle.net/10400.21/5079
Título: Demux devices based on A-SiC:H
Autor: Fantoni, Alessandro
Louro, Paula
Vieira, Manuel Augusto
Silva, T.
Vieira, Maria Manuela Almeida Carvalho
Palavras-chave: Amorphous silicon
Numerical Simulation
Wavelength division multiplexing (WDM)
Light-semiconductor interaction
Simulation
PINPIN
Data: Out-2012
Editora: Elsevier Science SA
Citação: FANTONI, Alessandro; LOURO, Paula; VIEIRA, M.A.; SILVA, T., VIEIRA, M. – Demux devices based on A-SiC:H. In Sensors and Actuators A-Physical. Elsevier, 2012. ISSN: 0924-4247. Vol. 186, pp. 143-147
Resumo: In this paper we present results about the functioning of a multilayered a-SiC:H heterostructure as a device for wavelength-division demultiplexing of optical signals. The device is composed of two stacked p-i-n photodiodes, both optimized for the selective collection of photogenerated carriers. Band gap engineering was used to adjust the photogeneration and recombination rates profiles of the intrinsic absorber regions of each photodiode to short and long wavelength absorption and carrier collection in the visible spectrum. The photocurrent signal using different input optical channels was analyzed at reverse and forward bias and under steady state illumination. This photocurrent is used as an input for a demux algorithm based on the voltage controlled sensitivity of the device. The device functioning is explained with results obtained by numerical simulation of the device, which permit an insight to the internal electric configuration of the double heterojunction.These results address the explanation of the device functioning in the frequency domain to a wavelength tunable photocapacitance due to the accumulation of space charge localized at the internal junction. The existence of a direct relation between the experimentally observed capacitive effects of the double diode and the quality of the semiconductor materials used to form the internal junction is highlighted.
Peer review: yes
URI: http://hdl.handle.net/10400.21/5079
DOI: 10.1016/j.sna.2012.05.020
ISSN: 0924-4247
Versão do Editor: http://ac.els-cdn.com/S092442471200297X/1-s2.0-S092442471200297X-main.pdf?_tid=eeee45b4-5791-11e3-af81-00000aacb35f&acdnat=1385577184_5635ee8de49adc457fe51c23db2d77bd
Aparece nas colecções:ISEL - Eng. Elect. Tel. Comp. - Comunicações

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