Utilize este identificador para referenciar este registo: http://hdl.handle.net/10400.21/4978
Título: InOx thin films deposited by plasma assisted evaporation: application in light shutters
Autor: Merino, E. G.
Almeida, Pedro Lúcio Maia Marques de
Carvalho, Carlos Nunes de
Brogueira, P.
Amaral, A.
Lavareda, Guilherme
Palavras-chave: InOx
rf-PERTE
Room Temperature
TCO
Liquid Crystals
Electro-Optical Devices
Data: Set-2014
Editora: Pergamon-Elsevier Science LTD
Citação: MERINO, E. G.; [et al] – InOx thin films deposited by plasma assisted evaporation: Application in light shutters. Vacuum. ISSN: 0042-207X. Vol. 107 (2014), pp. 116-119
Resumo: An integration of undoped InOx and commercial ITO thin films into laboratory assembled light shutter devices is made. Accordingly, undoped transparent conductive InOx thin films, about 100 nm thick, are deposited by radiofrequency plasma enhanced reactive thermal evaporation (rf-PERTE) of indium teardrops with no intentional heating of the glass substrates. The process of deposition occurs at very low deposition rates (0.1-0.3 nm/s) to establish an optimized reaction between the oxygen plasma and the metal vapor. These films show the following main characteristics: transparency of 87% (wavelength, lambda = 632.8 nm) and sheet resistance of 52 Omega/sq; while on commercial ITO films the transparency was of 92% and sheet resistance of 83 Omega/sq. The InOx thin film surface characterized by AFM shows a uniform grain texture with a root mean square surface roughness of Rq similar to 2.276 nm. In contrast, commercial ITO topography is characterized by two regions: one smoother with Rq similar to 0.973 nm and one with big grains (Rq similar to 3.617 nm). For the shutters assembled using commercial ITO, the light transmission coefficient (Tr) reaches the highest value (Tr-max) of 89% and the lowest (Tr-min) of 1.3% [13], while for the InOx shutters these values are 80.1% and 3.2%, respectively. Regarding the electric field required to achieve 90% of the maximum transmission in the ON state (E-on), the one presented by the devices assembled with commercial ITO coated glasses is 2.41 V/mu m while the one presented by the devices assembled with InOx coated glasses is smaller, 1.77 V/mu m. These results corroborate the device quality that depends on the base materials and fabrication process used. (C) 2014 Elsevier Ltd. All rights reserved.
Peer review: yes
URI: http://hdl.handle.net/10400.21/4978
DOI: 10.1016/j.vacuum.2014.04.011
ISSN: 0042-207X
Aparece nas colecções:ISEL - Física - Artigos

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