Utilize este identificador para referenciar este registo: http://hdl.handle.net/10400.21/2761
Título: Measurement of Photo Capacitance in Amorphous Silicon Photodiodes
Autor: Goncalves, Dora
Fernandes, L. Miguel
Louro, Paula
Vieira, Maria Manuela Almeida Carvalho
Fantoni, Alessandro
Palavras-chave: Capacitance
Photodiode
Amorphous silicon
Data: 2013
Editora: Springer-Verlag Berlin
Citação: GONÇALVES, Dora; FERNANDES, L. Miguel; LOURO, Paula; VIEIRA, Manuela; FANTONI, Alessandro - Measurement of Photo Capacitance in Amorphous Silicon Photodiodes. Technological Innovation for the Internet of Things. ISSN 1868-4238. ISBN 978-642-37290-2. Vol. 394 (2013), p. 547-554.
Relatório da Série N.º: IFIP Advances in Information and Communication Technology;
Resumo: This paper discusses the photodiode capacitance dependence on imposed light and applied voltage using different devices. The first device is a double amorphous silicon pin-pin photodiode; the second one a crystalline pin diode and the last one a single pin amorphous silicon diode. Double amorphous silicon diodes can be used as (de)multiplexer devices for optical communications. For short range applications, using plastic optical fibres, the WDM (wavelength-division multiplexing) technique can be used in the visible light range to encode multiple signals. Experimental results consist on measurements of the photodiode capacitance under different conditions of imposed light and applied voltage. The relation between the capacitive effects of the double diode and the quality of the semiconductor internal junction will be analysed. The dynamics of charge accumulations will be measured when the photodiode is illuminated by a pulsed monochromatic light.
Peer review: yes
URI: http://hdl.handle.net/10400.21/2761
ISBN: 978-3-642-37290-2
ISSN: 1868-4238
Aparece nas colecções:ISEL - Eng. Elect. Tel. Comp. - Comunicações

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