Utilize este identificador para referenciar este registo: http://hdl.handle.net/10400.21/2112
Título: Boron-doped nanocrystalline silicon thin films for solar cells
Autor: Fathi, E.
Vygranenko, Yuri
Vieira, Maria Manuela Almeida Carvalho
Sazonov, A.
Palavras-chave: Thin solid films
Nanocrystalline silicon
PECVD
Solar cells
Microcrystalline silicon
Amorphous-silicon
Raman-spectroscopy
SI nanocrystals
P-layer
Thickness
Hydrogen
Silane
Window
Seed
Data: 15-Ago-2011
Editora: Elsevier Science BV
Citação: FATHI, E.; VYGRANENKO, Y.; VIEIRA, M.; SAZONOV, A. - Boron-doped nanocrystalline silicon thin films for solar cells. Applied Surface Science. ISSN 0169-4332. Vol. 257, n.º 21 (2011) p. 8901-8905.
Resumo: This article reports on the structural, electronic, and optical properties of boron-doped hydrogenated nanocrystalline silicon (nc-Si: H) thin films. The films were deposited by plasma-enhanced chemical vapour deposition (PECVD) at a substrate temperature of 150 degrees C. Crystalline volume fraction and dark conductivity of the films were determined as a function of trimethylboron-to-silane flow ratio. Optical constants of doped and undoped nc-Si: H were obtained from transmission and reflection spectra. By employing p(+) nc-Si: H as a window layer combined with a p' a-SiC buffer layer, a-Si: H-based p-p'-i-n solar cells on ZnO:Al-coated glass substrates were fabricated. Device characteristics were obtained from current-voltage and spectral-response measurements. (C) 2011 Elsevier B. V. All rights reserved.
Peer review: yes
URI: http://hdl.handle.net/10400.21/2112
ISSN: 0169-4332
Aparece nas colecções:ISEL - Eng. Elect. Tel. Comp. - Artigos

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