Utilize este identificador para referenciar este registo: http://hdl.handle.net/10400.21/1347
Título: New p-i-n Si : H imager configuration for spatial resolution improvement
Autor: Vieira, Maria Manuela Almeida Carvalho
Fernandes, Miguel
Martins, João
Louro, Paula
Maçarico, António Filipe Ruas da Trindade
Schwarz, R.
Schubert, M. B.
Palavras-chave: Solid state transducer
a-Si : H p-i-n devices
Optical sensors
Imager
Image acquisition and representation
Analog readout
Silicon
Data: 1-Ago-2001
Editora: Elsevier Science SA
Citação: Vieira M, Fernandes M, Martins J, Antunes P L, Maçarico A, Schwarz R, Schubert M B. New p-i-n Si : H imager configuration for spatial resolution improvement.Sensors and Actuators A-Physical. 2001; 92(1-3):60-66.
Relatório da Série N.º: 92
Resumo: Amorphous glass/ZnO-Al/p(a-Si:H)/i(a-Si:H)/n(a-Si1-xCx:H)/Al imagers with different n-layer resistivities were produced by plasma enhanced chemical vapour deposition technique (PE-CVD). An image is projected onto the sensing element and leads to spatially confined depletion regions that can be readout by scanning the photodiode with a low-power modulated laser beam. The essence of the scheme is the analog readout, and the absence of semiconductor arrays or electrode potential manipulations to transfer the information coming from the transducer. The influence of the intensity of the optical image projected onto the sensor surface is correlated with the sensor output characteristics (sensitivity, linearity blooming, resolution and signal-to-noise ratio) are analysed for different material compositions (0.5 < x < 1). The results show that the responsivity and the spatial resolution are limited by the conductivity of the doped layers. An enhancement of one order of magnitude in the image intensity signal and on the spatial resolution are achieved at 0.2 mW cm(-2) light flux by decreasing the n-layer conductivity by the same amount. A physical model supported by electrical simulation gives insight into the image-sensing technique used.
Peer review: yes
URI: http://hdl.handle.net/10400.21/1347
ISSN: 0924-4247
Aparece nas colecções:ISEL - Eng. Elect. Tel. Comp. - Artigos

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