Utilize este identificador para referenciar este registo: http://hdl.handle.net/10400.21/1343
Título: ITO/SiOx/Si optical sensor with internal gain
Autor: Fernandes, Miguel
Vygranenko, Yuri
Schwarz, R.
Vieira, Maria Manuela Almeida Carvalho
Palavras-chave: Optical Sensor
Silicon
Indium-tin-oxide films
Photocurrent multiplication
Data: 1-Ago-2001
Editora: Elsevier Science SA
Citação: Fernandes M, Vygranenko Y, Schwarz R, Vieira M. ITO/SiOx/Si optical sensor with internal gain. Sensors and Actuators A-Physical. 2001; 92 (1-3): 152-155.
Relatório da Série N.º: 92
Resumo: A visible/near-infrared optical sensor based on an ITO/SiOx/n-Si structure with internal gain is presented. This surface-barrier structure was fabricated by a low-temperature processing technique. The interface properties and carder transport were investigated from dark current-voltage and capacitance-voltage characteristics. Examination of the multiplication properties was performed under different light excitation and reverse bias conditions. The spectral and pulse response characteristics are analysed. The current amplification mechanism is interpreted by the control of electron current by the space charge of photogenerated holes near the SiOx/Si interface. The optical sensor output characteristics and some possible device applications are presented.
Peer review: yes
URI: http://hdl.handle.net/10400.21/1343
ISSN: 0924-4247
Aparece nas colecções:ISEL - Eng. Elect. Tel. Comp. - Artigos

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