Utilize este identificador para referenciar este registo: http://hdl.handle.net/10400.21/1342
Título: Image and color recognition using amorphous silicon p-i-n photodiodes
Autor: Louro, Paula
Vieira, Maria Manuela Almeida Carvalho
Fantoni, Alessandro
Fernandes, Miguel
Carvalho, C. N.
Lavareda, G.
Palavras-chave: Photodiode
Image sensor
Color detection
SI
Data: 23-Set-2005
Editora: Elsevier Science SA
Citação: Louro P, Vieira M, Fantoni A, Fernandes M, Carvalho C N, Lavareda G. Image and color recognition using amorphous silicon p-i-n photodiodes.Sensors and Actuators A-Physical. 2005; Volume 123-24: 326-330.
Relatório da Série N.º: 123-124
Resumo: Large area hydrogenated amorphous silicon single and stacked p-i-n structures with low conductivity doped layers are proposed as monochrome and color image sensors. The layers of the structures are based on amorphous silicon alloys (a-Si(x)C(1-x):H). The current-voltage characteristics and the spectral sensitivity under different bias conditions are analyzed. The output characteristics are evaluated under different read-out voltages and scanner wavelengths. To extract information on image shape, intensity and color, a modulated light beam scans the sensor active area at three appropriate bias voltages and the photoresponse in each scanning position ("sub-pixel") is recorded. The investigation of the sensor output under different scanner wavelengths and varying electrical bias reveals that the response can be tuned, thus enabling color separation. The operation of the sensor is exemplified and supported by a numerical simulation.
URI: http://hdl.handle.net/10400.21/1342
ISSN: 0924-4247
Aparece nas colecções:ISEL - Eng. Elect. Tel. Comp. - Artigos

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