Utilize este identificador para referenciar este registo: http://hdl.handle.net/10400.21/1338
Título: Bias-dependent photocurrent collection in p-i-n a-Si : H/SiC : H heterojunction
Autor: Louro, Paula
Vieira, Maria Manuela Almeida Carvalho
Vygranenko, Yuri
Fernandes, M.
Schwarz, R.
Schubert, M.
Palavras-chave: Optical bias
Heterostructures
Optoelectronic properties
Numerical simulation
Data: 1-Abr-2002
Editora: Elsevier Science SA
Citação: Louro P, Vieira M, Vygranenko Y, Fernandes M. Schwarz R, Schubert M.Bias dependent photocurrent collection in p-i-n a-Si : EVSiC : H heterojunction. Sensors and Actuators A-Physical. 2002; 97.98:221/226.
Relatório da Série N.º: 97-8
Resumo: A series of large area single layers and glass/ZnO:AVp(SixC1-x:H)/i(Si:H)/n(SixC1-x:H)/AI (0 < x < 1) heterojunction cells were produced by plasma-enhanced chemical vapour deposition (PE-CVD) at low temperature. Junction properties, carrier transport and photogeneration are investigated from dark and illuminated current-voltage (J-V) and capacitance-voltage (C-V) characteristics. For the heterojunction cells atypical J-V characteristics under different illumination conditions are observed leading to poor fill factors. High series resistances around 106 Q are also measured. These experimental results were used as a basis for the numerical simulation of the energy band diagram, and the electrical field distribution of the structures. Further comparison with the sensor performance gave satisfactory agreement. Results show that the conduction band offset is the most limiting parameter for the optimal collection of the photogenerated carriers. As the optical gap increases and the conductivity of the doped layers decreases, the transport mechanism changes from a drift to a diffusion-limited process.
Peer review: yes
URI: http://hdl.handle.net/10400.21/1338
ISSN: 0924-4247
Aparece nas colecções:ISEL - Eng. Elect. Tel. Comp. - Artigos

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