Utilize este identificador para referenciar este registo: http://hdl.handle.net/10400.21/1299
Título: Nanocrystalline p-layer for a-Si:H p-i-n solar cells and photodiodes
Autor: Vygranenko, Yuri
Fathi, E.
Sazonov, A.
Vieira, Maria Manuela Almeida Carvalho
Nathan, Arokia
Palavras-chave: Nanocrystalline silicon
Conductivity
PECVD
Solar cell
Photodiode
Microcrystalline silicon films
Raman-spectrocopy
Thin-films
Data: Nov-2010
Editora: Elsevier Science BV
Citação: Vygranenko Y, Fathi E, Sazonov A, Vieira M, Nathan A. Nanocrystalline p-layer for a-Si:H p-i-n solar cells and photodiodes. Solar Energy Materials and Solar Cells. 2010; 94 (11): 1860-1863 Sp. Iss. SI.
Relatório da Série N.º: 11
Resumo: We report on structural, electronic, and optical properties of boron-doped, hydrogenated nanocrystalline silicon (nc-Si:H) thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) at a substrate temperature of 150 degrees C. Film properties were studied as a function of trimethylboron-to-silane ratio and film thickness. The absorption loss of 25% at a wavelength of 400 nm was measured for the 20 nm thick films on glass and glass/ZnO:Al substrates. By employing the p(+) nc-Si:H as a window layer, complete p-i-n structures were fabricated and characterized. Low leakage current and enhanced sensitivity in the UV/blue range were achieved by incorporating an a-SiC:H buffer between the p- and i-layers.
Peer review: yes
URI: http://hdl.handle.net/10400.21/1299
ISSN: 0927-0248
Aparece nas colecções:ISEL - Eng. Elect. Tel. Comp. - Artigos

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